s mhop microelectronics c orp. a STM122N symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 100v 3.4a 125 @ vgs=4.5v 100 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. dual n-channel enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.0 www.samhop.com.tw dec,27,2011 1 details are subject to change without notice. t a =25 c w p d c -55 to 150 t a =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 62.5 c/w thermal resistance, junction-to-ambient r ja t a =70 c a e as mj single pulse avalanche energy d t a =70 c w a a a 42 3.4 12 2 g r p p r p p so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 suface mount package.
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 83 g fs s c iss 930 pf c oss 63 pf c rss 45 pf q g 14 nc 14 38 8.2 t d(on) 14 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =1.7a v ds =5v,i d =1.7a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =1.5a 100 93 125 m ohm c f=1.0mhz c STM122N ver 1.0 www.samhop.com.tw dec,27,2011 2 v sd nc q gs nc q gd 1.7 4 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =1.7a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =3a 0.83 1.3 v notes nc 7.3 v ds =50v,i d =1.7a,v gs =10v v ds =50v,i d =1.7a,v gs =4.5v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ _ 1.0 1.7 3 4.3
STM122N ver 1.0 www.samhop.com.tw dec,27,2011 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 20 16 12 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =4v v gs =10v v gs =4.5v v gs =3.5v v gs =3v 10 8 6 4 2 0 0 0.8 4.8 4.0 3.2 2.4 1.6 tj=125 c -55 c 25 c 240 200 160 120 80 40 1 1 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =1.7a v gs =4.5v i d =1.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 4 8 12 16 20
STM122N ver 1.0 www.samhop.com.tw dec,27,2011 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 240 200 160 120 80 40 0 2468 10 0 1 00.3 20 10 1.5 0.6 0.9 1.2 1200 1000 800 600 400 200 0 10 15 20 25 30 10 8 6 4 2 0 024 6 810121416 v ds =50v i d =1.7a 125 c 75 c 25 c i d =1.7a 25 c 125 c 75 c ciss coss crss 110 100 1 10 100 300 vds=50v,id=1a vgs=10v tr td(off ) tf 60 6 0.1 1 10 100 10 1 0.1 0.01 v gs =10v single pulse t a =25 c 100 10 0 u s 10us 1 m s 10ms 100ms d c r ds ( on) limi t td(on) 05
STM122N ver 1.0 www.samhop.com.tw dec,27,2011 5 t p v (br )dss i as f igure 13b. o fr m w a ve s u nc l am p ed in d u ct i ve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance p dm t 1 t 2 1. r ? ja (t)=r (t) * r ? ja 2. r ? ja =s ee datasheet 3. t jm- t a =p dm *r ? ja (t) 4. duty cycle, d=t 1 /t 2 single pulse f igure 13a. u nc l am p ed s i n d u ct i ve t e t ci r c u i t r g i as 0.01 t p d.u.t l v ds + - dd 20v v
STM122N ver 1.0 www.samhop.com.tw dec,27,2011 6 package outline dimensions so-8 symbols min min 0.004 0.189 0 1.35 0.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.75 0.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l hx45 o a a1 a2 c d e e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020
STM122N ver 1.0 www.samhop.com.tw dec,27,2011 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0 +0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w1 m n w g v r s k h
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